Influence of pulse electronic irradiation power on processes of F2 centers accumulation in LiF crystals

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dc.contributor.author Даулетбекова А.
dc.date.accessioned 2012-12-24T09:03:47Z
dc.date.available 2012-12-24T09:03:47Z
dc.date.issued 2012-12-24
dc.identifier.uri http://repository.enu.kz/handle/123456789/3407
dc.description The work presents the research results of F2 - centers accumulation in LiF crystals under electron pulse irradiation and analytical description F2 accumulation process in the range of integral doses not exceeding 2.104 Gy. en_US
dc.description.abstract The work presents the research results of F2 - centers accumulation in LiF crystals under electron pulse irradiation and analytical description F2 accumulation process in the range of integral doses not exceeding 2.104 Gy. en_US
dc.description.sponsorship Евразийский национальный университет en_US
dc.subject LiF crystals en_US
dc.title Influence of pulse electronic irradiation power on processes of F2 centers accumulation in LiF crystals en_US
dc.type Article en_US


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