Influence of pulse electronic irradiation power on processes of F2 centers accumulation in LiF crystals

dc.contributor.author	Даулетбекова А.
dc.date.accessioned	2012-12-24T09:03:47Z
dc.date.available	2012-12-24T09:03:47Z
dc.date.issued	2012-12-24
dc.identifier.uri	http://repository.enu.kz/handle/123456789/3407
dc.description	The work presents the research results of F2 - centers accumulation in LiF crystals under electron pulse irradiation and analytical description F2 accumulation process in the range of integral doses not exceeding 2.104 Gy.	en_US
dc.description.abstract	The work presents the research results of F2 - centers accumulation in LiF crystals under electron pulse irradiation and analytical description F2 accumulation process in the range of integral doses not exceeding 2.104 Gy.	en_US
dc.description.sponsorship	Евразийский национальный университет	en_US
dc.subject	LiF crystals	en_US
dc.title	Influence of pulse electronic irradiation power on processes of F2 centers accumulation in LiF crystals	en_US
dc.type	Article	en_US