RECOMBINATIONAL AND RADIOSTIMULATED PROCESSES IN SULPHATES WITH CORRELATED DEFECTS

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dc.contributor.author Nurakhmetov, T.N.
dc.contributor.author Kainarbay, A.
dc.contributor.author Salikhodja, D.M.
dc.contributor.author Zhunusbekov, A.
dc.contributor.author Sadykova, B.М.
dc.contributor.author Pazylbek, С.
dc.contributor.author Karipbayev, Zh.Т.
dc.date.accessioned 2013-06-17T05:39:45Z
dc.date.available 2013-06-17T05:39:45Z
dc.date.issued 2013-06-17
dc.identifier.uri http://repository.enu.kz/handle/data/10232
dc.description http://www.enu.kz/ ru_RU
dc.description.abstract Energy levels of the electronic and hole captures centre are located approximately at one level a relatively to valence bond top and a bottom of conductivity bond in irradiated ionic crystals at low temperature. ru_RU
dc.language.iso en_US ru_RU
dc.relation.ispartofseries 3rd International Congress on Radiation Physics and Chemistry of Condensed Matter, High Current Electronics and Modification of Materials with Particle Beams and Plasma Flows;Tomsk 2012
dc.subject Energy levels ru_RU
dc.subject X-ray ru_RU
dc.subject Eg of a matrix ru_RU
dc.title RECOMBINATIONAL AND RADIOSTIMULATED PROCESSES IN SULPHATES WITH CORRELATED DEFECTS ru_RU
dc.type Article ru_RU


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