Latent tracks of swift Bi ions in Si3N4

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dc.contributor.author Van Vuuren, A.J.
dc.contributor.author Ibrayeva, A.
dc.contributor.author Rymzhanov, R.A.
dc.contributor.author Zhalmagambetova, A.
dc.contributor.author O'Connell, J.H.
dc.contributor.author Skuratov, V.A.
dc.contributor.author Uglov, V.V.
dc.contributor.author Zlotski, S.V.
dc.contributor.author Volkov, A.E.
dc.contributor.author Zdorovets, M.
dc.date.accessioned 2020-09-04T09:43:10Z
dc.date.available 2020-09-04T09:43:10Z
dc.date.issued 2020
dc.identifier.isbn DOI: 10.1088/2053-1591/ab72d3
dc.identifier.issn 20531591
dc.identifier.uri http://repository.enu.kz:8080/handle/data/16077
dc.description http://www.enu.kz/en/ ru_RU
dc.description.abstract Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si3N4 induced by 710 MeVBi ions were studied usingTEMandXRDtechniques, andMDsimulation. Experimental results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material. ru_RU
dc.language.iso en ru_RU
dc.publisher Materials Research Express ru_RU
dc.relation.ispartofseries Volume 7, Issue 2;Номер статьи 025512
dc.subject swift heavy ions ru_RU
dc.subject latent tracks ru_RU
dc.subject electron microscopy ru_RU
dc.subject x-ray diffraction ru_RU
dc.subject molecular dynamics simulation ru_RU
dc.title Latent tracks of swift Bi ions in Si3N4 ru_RU
dc.type Article ru_RU


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