Investigation of the temperature and precursors concentration dependence of the formation of ZnSe quantum dots

dc.contributor.author	Duisenbay, B.A.
dc.contributor.author	Alibay, T.T.
dc.contributor.author	Akhmetova, A.S.
dc.contributor.author	Zhangylyssov, K.B.
dc.contributor.author	Daurenbekova, R.K.
dc.contributor.author	Kainarbay, A.Zh.
dc.contributor.author	Nurakhmetov, T.N.
dc.contributor.author	Daurenbekov, D.H.
dc.date.accessioned	2023-12-06T08:22:42Z
dc.date.available	2023-12-06T08:22:42Z
dc.date.issued	2022
dc.identifier.uri	http://rep.enu.kz/handle/enu/10887
dc.description.abstract	Various variations of the synthesis of ZnSe quantum dots are investigated. The influence of temperature, the concentration of precursors and the time of synthesis of quantum dots was taken into account. Aliquot absorption spectra is measured for various time intervals and the dynamics of the growth of ZnSe quantum dots is estimated. Luminescence and absorption spectra were obtained for purified quantum dots. Based on the experimental data, the nucleation time of quantum dots, optimal methods of synthesis and growth control is determent. HRTEM images showed the average size of ZnSe quantum dot, the calculated band gap is 2.84 eV.	ru
dc.language.iso	en	ru
dc.relation.ispartofseries	Vol.6(3);244-250
dc.subject	ZnSe quantum dots	ru
dc.subject	semiconductor	ru
dc.subject	luminescence	ru
dc.subject	absorption	ru
dc.subject	synthesis	ru
dc.title	Investigation of the temperature and precursors concentration dependence of the formation of ZnSe quantum dots	ru
dc.type	Article	ru