Electron-hole capture centers in an irradiated K2SO4 -Cu crystal

dc.contributor.author	Nurakhmetov, T.N.
dc.contributor.author	Salikhodzha, Zh.M.
dc.contributor.author	Bakhtizin, R.Z.
dc.contributor.author	Zhunusbekov, A.M.
dc.contributor.author	Kainarbay, A.Zh.
dc.contributor.author	Daurenbekov, D.H.
dc.contributor.author	Sadykova, B.M.
dc.contributor.author	Zhangylyssov, K.B.
dc.contributor.author	Yussupbekova, B.N.
dc.date.accessioned	2024-12-27T04:35:33Z
dc.date.available	2024-12-27T04:35:33Z
dc.date.issued	2019
dc.identifier.issn	2522-9869
dc.identifier.other	DOI: 10.29317/ejpfm.2019030405
dc.identifier.uri	http://rep.enu.kz/handle/enu/20487
dc.description.abstract	The methods of vacuum-ultraviolet and thermal activation spectroscopy were used to measure the excitation spectra of impurity radiation in the fundamental absorption band of K 2 SO 4 -Cu crystals at 15 K and 300 K. An energy transfer was detected from the base to Cu + impurities. The band gap of crystals K 2 SO 4 was estimated. In K 2 SO 4 -Cu crystals, recombination radiation bands were detected at 2.95 ÷ 3.0 eV corresponding to electron-hole capture centers.	ru
dc.language.iso	en	ru
dc.publisher	Eurasian Journal of Physics and Functional Materials	ru
dc.relation.ispartofseries	3(4), 330-338;
dc.subject	photon	ru
dc.subject	electron	ru
dc.subject	hole	ru
dc.subject	tunnel luminescence	ru
dc.subject	recombination	ru
dc.subject	band gap	ru
dc.title	Electron-hole capture centers in an irradiated K2SO4 -Cu crystal	ru
dc.type	Article	ru