Latent tracks of swift Bi ions in Si3 N4

dc.contributor.author	Vuuren, A Janse van
dc.contributor.author	R A Rymzhanov, A Ibrayeva2,3 ,
dc.contributor.author	Zhalmagambetova, A
dc.contributor.author	Connell, JHO
dc.contributor.author	Skuratov, V A
dc.contributor.author	Uglov, V V
dc.contributor.author	Zlotski, S V
dc.contributor.author	Volkov, A E
dc.contributor.author	Zdorovets, M
dc.date.accessioned	2024-12-27T09:36:47Z
dc.date.available	2024-12-27T09:36:47Z
dc.date.issued	2020
dc.identifier.issn	2053-1591
dc.identifier.other	doi.org/10.1088/2053-1591/ab72d3
dc.identifier.uri	http://rep.enu.kz/handle/enu/20545
dc.description.abstract	Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si3N4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD)techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material.	ru
dc.language.iso	en	ru
dc.publisher	Materials Research Express	ru
dc.relation.ispartofseries	7 (2020) 025512;
dc.title	Latent tracks of swift Bi ions in Si3 N4	ru
dc.type	Article	ru