Study of the Microstructure and Phase Composition of Ceramics Based on Silicon Carbide Irradiated with Low-Energy Helium Ions

Abstract

The effect of irradiation with helium ions with energy of 40 keV and doses from 1 × 1014 to 2 × 1017 cm–2 on the microstructure and phase composition of ceramics based on silicon carbide is studied. Radiation growth of the 6H–SiC crystal lattice is revealed. At a dose of 1 × 1016 cm–2, a decrease in deformation is observed related to the formation of gas-vacancy clusters, which are sinks for radiation defects. Amorphization of the near-surface layer is established.