| dc.contributor.author | Uglova, V. V. | |
| dc.contributor.author | Kholada, V. M. | |
| dc.contributor.author | Grinchukb, P. S. | |
| dc.contributor.author | Ivanovc, I. A. | |
| dc.contributor.author | Kozlovsky, A. L. | |
| dc.contributor.author | Zdorovets, M. V. | |
| dc.date.accessioned | 2026-03-16T12:24:33Z | |
| dc.date.available | 2026-03-16T12:24:33Z | |
| dc.date.issued | 2024 | |
| dc.identifier.issn | 2075-1133 | |
| dc.identifier.other | DOI: 10.1134/S2075113324700011 | |
| dc.identifier.uri | http://repository.enu.kz/handle/enu/30432 | |
| dc.description.abstract | The effect of irradiation with helium ions with energy of 40 keV and doses from 1 × 1014 to 2 × 1017 cm–2 on the microstructure and phase composition of ceramics based on silicon carbide is studied. Radiation growth of the 6H–SiC crystal lattice is revealed. At a dose of 1 × 1016 cm–2, a decrease in deformation is observed related to the formation of gas-vacancy clusters, which are sinks for radiation defects. Amorphization of the near-surface layer is established. | ru |
| dc.language.iso | en | ru |
| dc.publisher | Inorganic Materials: Applied Research | ru |
| dc.relation.ispartofseries | Vol. 15, No. 3, pp. 591–595; | |
| dc.subject | silicon carbide | ru |
| dc.subject | 6H–SiC | ru |
| dc.subject | helium | ru |
| dc.subject | amorphization | ru |
| dc.title | Study of the Microstructure and Phase Composition of Ceramics Based on Silicon Carbide Irradiated with Low-Energy Helium Ions | ru |
| dc.type | Article | ru |