<?xml version="1.0" encoding="UTF-8"?>
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<title>Materials Science</title>
<link href="http://repository.enu.kz/handle/enu/20363" rel="alternate"/>
<subtitle/>
<id>http://repository.enu.kz/handle/enu/20363</id>
<updated>2026-04-04T00:27:25Z</updated>
<dc:date>2026-04-04T00:27:25Z</dc:date>
<entry>
<title>Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms</title>
<link href="http://repository.enu.kz/handle/enu/30458" rel="alternate"/>
<author>
<name>Suchikova, Yana</name>
</author>
<author>
<name>Kovachov, Sergii</name>
</author>
<author>
<name>Bohdanov, Ihor</name>
</author>
<author>
<name>Konuhova, Marina</name>
</author>
<author>
<name>Zhydachevskyy, Yaroslav</name>
</author>
<author>
<name>Kumarbekov, Kuat</name>
</author>
<author>
<name>Pankratov, Vladimir</name>
</author>
<author>
<name>Popov, Anatoli I.</name>
</author>
<id>http://repository.enu.kz/handle/enu/30458</id>
<updated>2026-03-17T19:00:22Z</updated>
<published>2024-01-01T00:00:00Z</published>
<summary type="text">Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms
Suchikova, Yana; Kovachov, Sergii; Bohdanov, Ihor; Konuhova, Marina; Zhydachevskyy, Yaroslav; Kumarbekov, Kuat; Pankratov, Vladimir; Popov, Anatoli I.
This study focuses on the wet chemical synthesis of AlxGa1−xAs nanostructures, highlighting how different deposition conditions affect the film morphology and material properties.&#13;
Electrochemical etching was used to texture GaAs substrates, enhancing mechanical adhesion and&#13;
chemical bonding. Various deposition regimes, including voltage switching, gradual voltage increase,&#13;
and pulsed voltage, were applied to explore their impact on the film growth mechanisms. SEM&#13;
analysis revealed distinct morphologies, EDX confirmed variations in aluminum content, Raman&#13;
spectroscopy detected structural disorders, and XRD analysis demonstrated peak position shifts. The&#13;
findings emphasize the versatility and cost-effectiveness of wet electrochemical methods for fabricating high-quality AlxGa1−xAs films with tailored properties, showing potential for optoelectronic&#13;
devices, high-efficiency solar cells, and other advanced semiconductor applications.
</summary>
<dc:date>2024-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>USING COAL FLOTATION WASTE AS A HEAT-INSULATING  BILLING FOR THE HEAD PART OF A FORGING INGOT</title>
<link href="http://repository.enu.kz/handle/enu/30457" rel="alternate"/>
<author>
<name>Ibraev, I.K.</name>
</author>
<author>
<name>Ibraeva, O.T.</name>
</author>
<author>
<name>Aitkenov, N.B.</name>
</author>
<author>
<name>Sakipov, K.E.</name>
</author>
<id>http://repository.enu.kz/handle/enu/30457</id>
<updated>2026-03-17T19:03:19Z</updated>
<published>2024-01-01T00:00:00Z</published>
<summary type="text">USING COAL FLOTATION WASTE AS A HEAT-INSULATING  BILLING FOR THE HEAD PART OF A FORGING INGOT
Ibraev, I.K.; Ibraeva, O.T.; Aitkenov, N.B.; Sakipov, K.E.
The experience of using coal flotation waste as a weakly exothermic insulating backfill for &#13;
insulating the head part of forging dead-melted steel ingots is presented. It has been shown that when using &#13;
weakly exothermic fills based on single-component fills in the form of coal flotation waste, it is possible to reduce &#13;
the chemical heterogeneity of the ingot by producing a closed shrinkage cavity, which allows halving heat loss &#13;
and depth of penetration of shrinkage looseness into the body of the ingot, reducing the segregation of impurities, &#13;
compacting the head part of the ingot and increasing the yield; moreover, the profitable part of the ingot is more &#13;
dense and less contaminated with nonmetallic inclusions. The studied patterns of the formation of a closed &#13;
shrinkage cavity with a dense “bridge” in the head part of a dead-melted steel ingot made it possible to develop &#13;
and implement a technology for casting large forging ingots of sufficiently high quality using weakly exothermic &#13;
heat-insulating materials based on metallurgical waste (coke screenings, coal flotation waste).
</summary>
<dc:date>2024-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Unveiling the Structural and Optical Properties of MgAl2O4 Single Crystals Irradiated by Swift Heavy Ions</title>
<link href="http://repository.enu.kz/handle/enu/30456" rel="alternate"/>
<author>
<name>Akilbekov, Abdirash</name>
</author>
<author>
<name>Kiryakov, Arseny</name>
</author>
<author>
<name>Dauletbekova, Alma</name>
</author>
<author>
<name>Aralbayeva, Gulnara</name>
</author>
<author>
<name>Akylbekova, Aiman</name>
</author>
<author>
<name>Ospanova, Zhulduz</name>
</author>
<id>http://repository.enu.kz/handle/enu/30456</id>
<updated>2026-03-17T19:02:59Z</updated>
<published>2024-01-01T00:00:00Z</published>
<summary type="text">Unveiling the Structural and Optical Properties of MgAl2O4 Single Crystals Irradiated by Swift Heavy Ions
Akilbekov, Abdirash; Kiryakov, Arseny; Dauletbekova, Alma; Aralbayeva, Gulnara; Akylbekova, Aiman; Ospanova, Zhulduz
A synthetic single crystal of magnesium-aluminate spinel was irradiated perpendicularly&#13;
to the (111) plane with swift heavy xenon ions with an energy of 220 MeV. The modified layer was&#13;
attested based on Raman scattering spectra recorded while focusing on the surface. A decrease in&#13;
surface crystallinity was observed, reflected in the changes in fundamental optical characteristics&#13;
such as the band gap and the energies of static and dynamic disorder. In this study, we demonstrate,&#13;
along with the modification of optical characteristics and the formation of a disordered layer, the&#13;
creation of new optically active centers. The luminescent properties of these centers were analyzed.&#13;
The effect of temperature flare-up in the 3.4 eV band of the excitation spectrum was determined. The&#13;
low sensitivity of Cr3+ luminescence to SHI is demonstrated.
</summary>
<dc:date>2024-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Thin films of polyanilines and polymer nanocomposites for the  development of chemical sensors</title>
<link href="http://repository.enu.kz/handle/enu/30455" rel="alternate"/>
<author>
<name>Salikhov, R.B.</name>
</author>
<author>
<name>Ostaltsova, A.D.</name>
</author>
<author>
<name>Salikhov, T.R.</name>
</author>
<author>
<name>Balapanov, M.Kh.</name>
</author>
<author>
<name>Bugybayev, E.S.</name>
</author>
<id>http://repository.enu.kz/handle/enu/30455</id>
<updated>2026-03-17T19:01:14Z</updated>
<published>2024-01-01T00:00:00Z</published>
<summary type="text">Thin films of polyanilines and polymer nanocomposites for the  development of chemical sensors
Salikhov, R.B.; Ostaltsova, A.D.; Salikhov, T.R.; Balapanov, M.Kh.; Bugybayev, E.S.
The control and monitoring of humidity levels and the concentration of hazardous gases in the atmosphere are&#13;
subjects of significant interest across various fields. Consequently, current research focuses primarily on the&#13;
advancement of sensitive materials tailored for humidity and toxic gas sensors, aiming to achieve heightened performance and sensitivity while operating efficiently at ambient temperatures. Investigative efforts delve into exploring&#13;
thin film compositions comprising polyanilines and their derivatives, as well as polymer nanocomposites, with the&#13;
intention of fabricating chemical sensors. Diverse configurations of chemical sensors, manifesting as thin-film electronic devices such as resistive and transistor structures, are under scrutiny. The surface morphology of these thin&#13;
films is meticulously examined through scanning electron microscopy. Furthermore, the electrical characteristics, as&#13;
elucidated by the current-voltage profiles, of resistive and transistor structures utilizing thin films of polyanilines and&#13;
their derivatives alongside polymer nanocomposites, are analyzed in relation to variations in ambient humidity levels&#13;
and concentrations of hazardous gases such as ammonia vapors. The outcomes of this investigation underscore the&#13;
potential utility of organic compound-based thin films in the realm of chemical sensor development.
</summary>
<dc:date>2024-01-01T00:00:00Z</dc:date>
</entry>
</feed>
