A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 1011 cm−2 ÷ 4.87 × 1013 cm−2 ) and Bi (710 MeV, 1 × 1011 cm−2 ÷ 1 × 1013 cm−2 ) ions. It was shown that both the compressive and tensile stress fields were formed in the irradiated specimen, separated by ...

Zhumazhanova, A.; Mutali, A.; Ibrayeva, A.; Skuratov, V.; Dauletbekova, A.; Korneeva, E.; Akilbekov, A.; Zdorovets, M. Raman Study of Polycrystalline Si3N4 Irradiated with Swift Heavy Ions. Crystals 2021, 11, 1313. https:// doi.org/10.3390/cryst11111313

A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 1011 cm−2 ÷ 4.87 × 1013 cm−2 ) and Bi (710 MeV, 1 × 1011 cm−2 ÷ 1 × 1013 cm−2 ) ions. It was shown that both the compressive and tensile stress fields were formed in the irradiated specimen, separated by ...