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The Effect of 147 MeV 84Kr and 24.5 MeV 14N Ions Irradiation on the Optical Absorption, Luminescence, Raman Spectra and Surface of BaFBr Crystals
(Crystals, 2024)
Akilbekov, A.; Kenbayev, D.; Dauletbekova, A.; Shalaev, A.; Akylbekova, A.; Aralbayeva, G.; Baimukhanov, Z.; Baizhumanov, M.; Elsts, E.; Popov, A.I. The Effect of 147 MeV 84Kr and 24.5 MeV 14N Ions Irradiation on the Optical Absorption, Luminescence, Raman Spectra and Surface of BaFBr Crystals. Crystals 2024, 14, 480. https://doi.org/ 10.3390/cryst14060480
Unveiling the Structural and Optical Properties of MgAl2O4 Single Crystals Irradiated by Swift Heavy Ions
(Materials, 2024)
A synthetic single crystal of magnesium-aluminate spinel was irradiated perpendicularly
to the (111) plane with swift heavy xenon ions with an energy of 220 MeV. The modified layer was
attested based on Raman scattering spectra recorded while focusing on the surface. A decrease in
surface crystallinity was observed, reflected in the changes in fundamental optical characteristics
such ...
Optical Characteristics of MgAl2O4 Single Crystals Irradiated by 220 MeV Xe Ions
(Materials, 2023)
Akilbekov, A.; Kiryakov, A.; Baubekova, G.; Aralbayeva, G.; Dauletbekova, A.; Akylbekova, A.; Ospanova, Z.; Popov, A.I. Optical Characteristics of MgAl2O4 Single Crystals Irradiated by 220 MeV Xe Ions. Materials 2023, 16, 6414. https://doi.org/10.3390/ ma16196414
Unveiling the Structural and Optical Properties of MgAl2O4 Single Crystals Irradiated by Swift Heavy Ions
(Materials, 2024)
A synthetic single crystal of magnesium-aluminate spinel was irradiated perpendicularly
to the (111) plane with swift heavy xenon ions with an energy of 220 MeV. The modified layer was
attested based on Raman scattering spectra recorded while focusing on the surface. A decrease in
surface crystallinity was observed, reflected in the changes in fundamental optical characteristics
such ...
Raman Study of Polycrystalline Si3N4 Irradiated with Swift Heavy Ions
(Crystals, 2021)
A depth-resolved Raman spectroscopy technique was used to study the residual stress
profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 1011 cm−2 ÷
4.87 × 1013 cm−2
) and Bi (710 MeV, 1 × 1011 cm−2 ÷ 1 × 1013 cm−2
) ions. It was shown that both
the compressive and tensile stress fields were formed in the irradiated specimen, separated by ...
Raman Study of Polycrystalline Si3N4 Irradiated with Swift Heavy Ions
(Crystals, 2021)
Zhumazhanova, A.; Mutali, A.; Ibrayeva, A.; Skuratov, V.; Dauletbekova, A.; Korneeva, E.; Akilbekov, A.; Zdorovets, M. Raman Study of Polycrystalline Si3N4 Irradiated with Swift Heavy Ions. Crystals 2021, 11, 1313. https:// doi.org/10.3390/cryst11111313
High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride
(Crystals, 2022)
Janse van Vuuren, A.; Mutali, A.; Ibrayeva, A.; Sohatsky, A.; Skuratov, V.; Akilbekov, A.; Dauletbekova, A.; Zdorovets, M. High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride. Crystals 2022, 12, 1410. https:// doi.org/10.3390/cryst12101410









