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Electron-hole capture centers in an irradiated K2SO4 -Cu crystal

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dc.contributor.author Nurakhmetov, T.N.
dc.contributor.author Salikhodzha, Zh.M.
dc.contributor.author Bakhtizin, R.Z.
dc.contributor.author Zhunusbekov, A.M.
dc.contributor.author Kainarbay, A.Zh.
dc.contributor.author Daurenbekov, D.H.
dc.contributor.author Sadykova, B.M.
dc.contributor.author Zhangylyssov, K.B.
dc.contributor.author Yussupbekova, B.N.
dc.date.accessioned 2023-12-04T08:43:26Z
dc.date.available 2023-12-04T08:43:26Z
dc.date.issued 2019
dc.identifier.other DOI: 10.29317/ejpfm.2019030405
dc.identifier.uri http://rep.enu.kz/handle/enu/10658
dc.description.abstract The methods of vacuum-ultraviolet and thermal activation spectroscopy were used to measure the excitation spectra of impurity radiation in the fundamental absorption band of K 2 SO 4 -Cu crystals at 15 K and 300 K. An energy transfer was detected from the base to Cu + impurities. The band gap of crystals K 2 SO 4 was estimated. In K 2 SO 4 -Cu crystals, recombination radiation bands were detected at 2.95 ÷ 3.0 eV corresponding to electron-hole capture centers. ru
dc.language.iso en ru
dc.relation.ispartofseries Vol. 3(4);330-338
dc.subject photon ru
dc.subject electron ru
dc.subject hole ru
dc.subject tunnel luminescence ru
dc.subject recombination ru
dc.subject band gap ru
dc.title Electron-hole capture centers in an irradiated K2SO4 -Cu crystal ru
dc.type Article ru


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