Influence of Cu+ impurity on the efficiency of creation of electron-hole trapping centers in irradiated Na2SO4 − Cu crystals

dc.contributor.author	Nurakhmetov, T.N.
dc.contributor.author	Yussupbekova, B.N.
dc.contributor.author	Zhunusbekov, A.M.
dc.contributor.author	Daurenbekov, D.H.
dc.contributor.author	Sadykova, B.M.
dc.contributor.author	Zhangylyssov, K.B.
dc.contributor.author	Alibay, T.T.
dc.contributor.author	Tolekov, D.A.
dc.date.accessioned	2024-04-02T06:09:27Z
dc.date.available	2024-04-02T06:09:27Z
dc.date.issued	2021
dc.identifier.issn	2522-9869
dc.identifier.other	DOI: 10.32523/ejpfm.2021050305
dc.identifier.uri	http://rep.enu.kz/handle/enu/13238
dc.description.abstract	The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 − Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 − Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the recombination processes is transferred to impurities	ru
dc.language.iso	en	ru
dc.publisher	Eurasian Journal of Physics and Functional Materials	ru
dc.relation.ispartofseries	Vol.5;3
dc.subject	alkali metal sulfates	ru
dc.subject	electron-hole pairs	ru
dc.subject	glow centers	ru
dc.subject	phosphorescence	ru
dc.subject	recombination emission	ru
dc.subject	impurity	ru
dc.subject	TSL	ru
dc.title	Influence of Cu+ impurity on the efficiency of creation of electron-hole trapping centers in irradiated Na2SO4 − Cu crystals	ru
dc.type	Article	ru