Аннотации:
This work presents a novel, cost-effective method for synthesizing AlxGa1−xAs nanowhiskers
on a GaAs surface by electrochemical deposition. The process begins with structuring the GaAs
surface by electrochemical etching, forming a branched nanowhisker system. Despite the close resemblance of the crystal lattices of AlAs, GaAs, and AlxGa1−xAs, our study highlights the formation
of nanowhiskers instead of layer-by-layer film growth. X-ray diffraction analysis and photoluminescence spectrum evaluations confirm the synthesized structure’s crystallinity, uniformity, and
bandgap characteristics. The unique morphology of the nanowhiskers offers promising implications
for solar cell applications because of the increased light absorption potential and reduced surface
recombination energy losses. We conclude by emphasizing the need for further studies on the growth
mechanisms of AlxGa1−xAs nanowhiskers, adjustments of the “x” parameter during electrochemical
deposition, and detailed light absorption properties of the formed compounds. This research contributes to the field of wideband materials, particularly for solar energy applications, highlighting the
potential of electrochemical deposition as a flexible and economical fabrication method.
