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A simple way to control the filling degree of the SiO2/Si template pores with nickel

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dc.contributor.author Yakimchuk, D.
dc.contributor.author Bundyukova, V.
dc.contributor.author Borgekov, D.
dc.contributor.author Zdorovets, M.
dc.contributor.author Kozlovskiy, A.
dc.contributor.author Khubezhov, S.A.
dc.contributor.author Magkoev, T.T.
dc.contributor.author Bliev, A.P.
dc.contributor.author Belonogov, E.
dc.contributor.author Demyanov, S.
dc.contributor.author Kaniukov, E.
dc.date.accessioned 2024-12-25T07:39:15Z
dc.date.available 2024-12-25T07:39:15Z
dc.date.issued 2018
dc.identifier.issn 22147853
dc.identifier.other DOI 10.1016/j.matpr.2018.12.085
dc.identifier.uri http://rep.enu.kz/handle/enu/20369
dc.description.abstract The paper demonstrates a simple way to control the filling degree of the pores of a silicon oxide template on silicon substrate with nickel. SiO2/Si template was formed using the swift heavy ion tracks technology, which includes irradiation with high energy ions and chemical transformation of the obtained latent tracks into the pores. The preparation of SiO2(Ni)/Si nanostructures with different filling degree of pores in SiO2 with nickel was performed using the electrodeposition method by changing the duration of the process. A study and analysis of the morphology of SiO2(Ni)/Si nanostructures using scanning electron and atomic force microscopy was carried out to determine the nature of pore filling by metal. ru
dc.language.iso en ru
dc.publisher Materials Today: Proceedings ru
dc.relation.ispartofseries Том 7, Страницы 860 - 865;
dc.subject Ion-track technology ru
dc.subject SiO2/Si template ru
dc.subject template synthesis ru
dc.subject electrodeposition ru
dc.subject nickel nanostructures ru
dc.title A simple way to control the filling degree of the SiO2/Si template pores with nickel ru
dc.type Article ru


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