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Latent tracks of swift Bi ions in Si3 N4
Vuuren, A Janse van; R A Rymzhanov, A Ibrayeva2,3 ,; Zhalmagambetova, A; Connell, JHO; Skuratov, V A; Uglov, V V; Zlotski, S V; Volkov, A E; Zdorovets, M
Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si3N4 induced
by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental
results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) model.
The average track radius determined by means of electron microscopy coincides with that deduced
from computer modelling and is similar to the track core size predicted by the i-TS model using a
boiling criterion. Indirect (XRD)techniques give a larger average latent track radius which is
consistent with the integral nature of the signal collected from the probed volume of irradiated
material.
