Аннотации:
The recovery of radiation damage induced by 231-MeV xenon ions with varying
fluence (from 5 × 1011 to 2 × 1014 cm−2
) in α-Al2O3 (corundum) single crystals has been
studied by means of isochronal thermal annealing of radiation-induced optical absorption
(RIOA). The integral of elementary Gaussians (product of RIOA spectrum decomposition)
OK has been considered as a concentration measure of relevant oxygen-related Frenkel
defects (neutral and charged interstitial-vacancy pairs, F-H, F
+
-H−). The annealing kinetics
of these four ion-induced point lattice defects has been modelled in terms of diffusioncontrolled bimolecular recombination reactions and compared with those carried out earlier
for the case of corundum irradiation by fast neutrons. The changes in the parameters of
interstitial (mobile component in the recombination process) annealing kinetics—activation
energy E and pre-exponential factor X—in ion-irradiated crystals are considered.
