Аннотации:
In the present work, we present the process of preparing CdS nanostructures based on
templating synthesis using chemical deposition (CD) on a SiO2/Si substrate. A 0.7 µm thick silicon
dioxide film was thermally prepared on the surface of an n-type conduction Si wafer, followed by the
creation of latent ion tracks on the film by irradiating them with swift heavy Xe ions with an energy of
231 MeV and a fluence of 108
cm−2
. As a result of etching in hydrofluoric acid solution (4%), pores in
the form of truncated cones with different diameters were formed. The filling of the nanopores with
cadmium sulfide was carried out via templated synthesis using CD methods on a SiO2 nanopores/Si
substrate for 20–40 min. After CdS synthesis, the surfaces of nanoporous SiO2 nanopores/Si were
examined using a scanning electron microscope to determine the pore sizes and the degree of pore
filling. The crystal structure of the filled silica nanopores was investigated using X-ray diffraction,
which showed CdS nanocrystals with an orthorhombic structure with symmetry group 59 Pmmn
observed at 2θ angles of 61. 48◦ and 69.25◦
. Photoluminescence spectra were recorded at room
temperature in the spectral range of 300–800 nm at an excitation wavelength of 240 nm, where
emission bands centered around 2.53 eV, 2.45 eV, and 2.37 eV were detected. The study of the CVCs
showed that, with increasing forward bias voltage, there was a significant increase in the forward
current in the samples with a high degree of occupancy of CdS nanoparticles, which showed the oneway electronic conductivity of CdS/SiO2/Si nanostructures. For the first time, CdS nanostructures
with orthorhombic crystal structure were obtained using track templating synthesis, and the density
of electronic states was modeled using quantum–chemical calculations. Comparative analysis of
experimental and calculated data of nanostructure parameters showed good agreement and are
confirmed by the results of other authors.
