| dc.contributor.author | Suchikova, Yana | |
| dc.contributor.author | Kovachov, Serhii | |
| dc.contributor.author | Bohdanov, Ihor | |
| dc.contributor.author | Drozhcha, Dariya | |
| dc.contributor.author | Kosogov, Ivan | |
| dc.contributor.author | Karipbayev, Zhakyp T. | |
| dc.contributor.author | Popov, Anatoli I. | |
| dc.date.accessioned | 2026-03-05T05:57:22Z | |
| dc.date.available | 2026-03-05T05:57:22Z | |
| dc.date.issued | 2024 | |
| dc.identifier.issn | 2309-8589 | |
| dc.identifier.other | DOI: 10.15330/pcss.25.3.546-552 | |
| dc.identifier.uri | http://repository.enu.kz/handle/enu/29830 | |
| dc.description.abstract | This study comprehensively details the successful synthesis of a β-Ga2O3/por-GaAs/mono-GaAs heterostructure designed for portable solar cells. Employing a combination of electrochemical etching and hightemperature oxygen annealing, we engineered a heterostructure that exhibits both crystalline and amorphous phases. XRD, SEM, and Raman spectroscopy analyses confirmed the formation of crystalline β-Ga2O3 and GaAs, with the porosity in the GaAs layer enhancing light absorption and charge collection. The potential of the heterostructure to improve photovoltaic performance is attributed to the inherent stability of Ga2O3 and the increased surface area provided by the porous GaAs. | ru |
| dc.language.iso | en | ru |
| dc.publisher | PHYSICS AND CHEMISTRY OF SOLID STATE | ru |
| dc.relation.ispartofseries | V. 25, No. 3 (2024) pp. 546-552; | |
| dc.subject | β-Ga2O3 | ru |
| dc.subject | por-GaAs | ru |
| dc.subject | mono-GaAs | ru |
| dc.subject | heterostructure | ru |
| dc.subject | solar cells | ru |
| dc.subject | electrochemical etching | ru |
| dc.subject | oxygen annealing | ru |
| dc.subject | XRDSEM | ru |
| dc.subject | Raman spectroscopy | ru |
| dc.title | Synthesis and Characterization of β-Ga2O3/por-GaAs/mono-GaAs Heterostructures for Enhanced Portable Solar Cells | ru |
| dc.type | Article | ru |