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Synthesis and Characterization of β-Ga2O3/por-GaAs/mono-GaAs Heterostructures for Enhanced Portable Solar Cells

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dc.contributor.author Suchikova, Yana
dc.contributor.author Kovachov, Serhii
dc.contributor.author Bohdanov, Ihor
dc.contributor.author Drozhcha, Dariya
dc.contributor.author Kosogov, Ivan
dc.contributor.author Karipbayev, Zhakyp T.
dc.contributor.author Popov, Anatoli I.
dc.date.accessioned 2026-03-05T05:57:22Z
dc.date.available 2026-03-05T05:57:22Z
dc.date.issued 2024
dc.identifier.issn 2309-8589
dc.identifier.other DOI: 10.15330/pcss.25.3.546-552
dc.identifier.uri http://repository.enu.kz/handle/enu/29830
dc.description.abstract This study comprehensively details the successful synthesis of a β-Ga2O3/por-GaAs/mono-GaAs heterostructure designed for portable solar cells. Employing a combination of electrochemical etching and hightemperature oxygen annealing, we engineered a heterostructure that exhibits both crystalline and amorphous phases. XRD, SEM, and Raman spectroscopy analyses confirmed the formation of crystalline β-Ga2O3 and GaAs, with the porosity in the GaAs layer enhancing light absorption and charge collection. The potential of the heterostructure to improve photovoltaic performance is attributed to the inherent stability of Ga2O3 and the increased surface area provided by the porous GaAs. ru
dc.language.iso en ru
dc.publisher PHYSICS AND CHEMISTRY OF SOLID STATE ru
dc.relation.ispartofseries V. 25, No. 3 (2024) pp. 546-552;
dc.subject β-Ga2O3 ru
dc.subject por-GaAs ru
dc.subject mono-GaAs ru
dc.subject heterostructure ru
dc.subject solar cells ru
dc.subject electrochemical etching ru
dc.subject oxygen annealing ru
dc.subject XRDSEM ru
dc.subject Raman spectroscopy ru
dc.title Synthesis and Characterization of β-Ga2O3/por-GaAs/mono-GaAs Heterostructures for Enhanced Portable Solar Cells ru
dc.type Article ru


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