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dc.contributor.authorSuchikova, Yana
dc.contributor.authorKovachov, Serhii
dc.contributor.authorBohdanov, Ihor
dc.contributor.authorDrozhcha, Dariya
dc.contributor.authorKosogov, Ivan
dc.contributor.authorKaripbayev, Zhakyp T.
dc.contributor.authorPopov, Anatoli I.
dc.date.accessioned2026-03-05T05:57:22Z
dc.date.available2026-03-05T05:57:22Z
dc.date.issued2024
dc.identifier.issn2309-8589
dc.identifier.otherDOI: 10.15330/pcss.25.3.546-552
dc.identifier.urihttp://repository.enu.kz/handle/enu/29830
dc.description.abstractThis study comprehensively details the successful synthesis of a β-Ga2O3/por-GaAs/mono-GaAs heterostructure designed for portable solar cells. Employing a combination of electrochemical etching and hightemperature oxygen annealing, we engineered a heterostructure that exhibits both crystalline and amorphous phases. XRD, SEM, and Raman spectroscopy analyses confirmed the formation of crystalline β-Ga2O3 and GaAs, with the porosity in the GaAs layer enhancing light absorption and charge collection. The potential of the heterostructure to improve photovoltaic performance is attributed to the inherent stability of Ga2O3 and the increased surface area provided by the porous GaAs.ru
dc.language.isoenru
dc.publisherPHYSICS AND CHEMISTRY OF SOLID STATEru
dc.relation.ispartofseriesV. 25, No. 3 (2024) pp. 546-552;
dc.subjectβ-Ga2O3ru
dc.subjectpor-GaAsru
dc.subjectmono-GaAsru
dc.subjectheterostructureru
dc.subjectsolar cellsru
dc.subjectelectrochemical etchingru
dc.subjectoxygen annealingru
dc.subjectXRDSEMru
dc.subjectRaman spectroscopyru
dc.titleSynthesis and Characterization of β-Ga2O3/por-GaAs/mono-GaAs Heterostructures for Enhanced Portable Solar Cellsru
dc.typeArticleru


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