Recombination Luminescence and Electron–Hole Trapping Centers in BaSO4-Bi Phosphor

Abstract

This study of the BaSO4-Bi phosphor has revealed that the accumulated energy after external optical excitation exhibits specific characteristics. During irradiation with photon energy exceeding the bandgap, in addition to the intrinsic ultraviolet emission of the Bi3+ ion, several recombination emissions and emission from the Bi2+ ion are observed. At 80 K, the recombination luminescence states and Bi2+ ion emission form combined electronic states. Upon heating of the BaSO4-Bi phosphor, these combined electronic states decay into recombination emissions at 2.34 eV, 2.4 eV, 3.1 eV, and 2.7 eV, as well as Bi2+ ion emission at 1.97 eV. It is assumed that the 2.34 eV, 2.4 eV, and 3.1 eV emissions are associated with the recombination of electrons released from ionized SO3− 4 electron trapping centers with nonequivalently localized holes in the host lattice. The 2.7 eV emission is attributed to the decay of an exciton formed by electron–hole recombination near a Bi3+ ion.