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dc.contributor.authorUglova, V. V.
dc.contributor.authorKholada, V. M.
dc.contributor.authorGrinchukb, P. S.
dc.contributor.authorIvanovc, I. A.
dc.contributor.authorKozlovsky, A. L.
dc.contributor.authorZdorovets, M. V.
dc.date.accessioned2026-03-16T12:24:33Z
dc.date.available2026-03-16T12:24:33Z
dc.date.issued2024
dc.identifier.issn2075-1133
dc.identifier.otherDOI: 10.1134/S2075113324700011
dc.identifier.urihttp://repository.enu.kz/handle/enu/30432
dc.description.abstractThe effect of irradiation with helium ions with energy of 40 keV and doses from 1 × 1014 to 2 × 1017 cm–2 on the microstructure and phase composition of ceramics based on silicon carbide is studied. Radiation growth of the 6H–SiC crystal lattice is revealed. At a dose of 1 × 1016 cm–2, a decrease in deformation is observed related to the formation of gas-vacancy clusters, which are sinks for radiation defects. Amorphization of the near-surface layer is established.ru
dc.language.isoenru
dc.publisherInorganic Materials: Applied Researchru
dc.relation.ispartofseriesVol. 15, No. 3, pp. 591–595;
dc.subjectsilicon carbideru
dc.subject6H–SiCru
dc.subjectheliumru
dc.subjectamorphizationru
dc.titleStudy of the Microstructure and Phase Composition of Ceramics Based on Silicon Carbide Irradiated with Low-Energy Helium Ionsru
dc.typeArticleru


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