Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

dc.contributor.author	Al’zhanova, A.
dc.contributor.author	Dauletbekova, A.
dc.contributor.author	Komarov, F.
dc.contributor.author	Vlasukova, L.
dc.contributor.author	Yuvchenko, V.
dc.contributor.author	Akilbekov, A.
dc.contributor.author	Zdorovets, M.
dc.date.accessioned	2023-09-21T06:17:30Z
dc.date.available	2023-09-21T06:17:30Z
dc.date.issued	2016
dc.identifier.issn	0168-583X
dc.identifier.uri	http://rep.enu.kz/handle/enu/7509
dc.description.abstract	The process of latent track etching in SiO2/Si structures irradiated with 40Ar (38 MeV), 84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2 etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2.	ru
dc.language.iso	en	ru
dc.publisher	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	ru
dc.relation.ispartofseries	Volume 374;Pages 121 - 124
dc.subject	Amorphous SiO2 layer	ru
dc.subject	Channel system	ru
dc.subject	Chemical etching	ru
dc.subject	Ion tracks	ru
dc.title	Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions	ru
dc.type	Article	ru