Abstract:
ZnSeO3 nanocrystals with an orthorhombic structure were synthesized by electrochemical
and chemical deposition into SiO2/Si ion-track template formed by 200 MeV Xe ion irradiation with
the fluence of 107
ions/cm2
. The lattice parameters determined by the X-ray diffraction and calculated
by the CRYSTAL computer program package are very close to each other. It was found that ZnSeO3
has a direct band gap of 3.8 eV at the Γ-point. The photoluminescence excited by photons at 300 nm
has a low intensity, arising mainly due to zinc and oxygen vacancies. Photoluminescence excited
by photons with a wavelength of 300 nm has a very low intensity, presumably due to electronic
transitions of zinc and oxygen vacancies.
