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dc.contributor.author | Yusupov, Khabib | |
dc.contributor.author | Inerbaev, Talgat | |
dc.contributor.author | Rasander, Mikael | |
dc.contributor.author | Pankratova, Daria | |
dc.contributor.author | Concina, Isabella | |
dc.contributor.author | Larsson, Andreas J. | |
dc.contributor.author | Vomiero, Alberto | |
dc.date.accessioned | 2024-10-18T09:48:58Z | |
dc.date.available | 2024-10-18T09:48:58Z | |
dc.date.issued | 2021-10 | |
dc.identifier.issn | 25890042 | |
dc.identifier.other | DOI 10.1016/j.isci.2021.103145 | |
dc.identifier.uri | http://rep.enu.kz/handle/enu/17977 | |
dc.description.abstract | Thermoelectric materials convert waste heat into electric energy. Oxyselenidebased material, specifically, p-type BiCuSeO, is one of the most promising materials for these applications. There are numerous approaches to improve the heatto-electricity conversion performance. Usually, these approaches are applied individually, starting from the pure intrinsic material. Higher performance could, however, be reached by combining a few strategies simultaneously. In the current work, yttrium, niobium, and phosphorous substitutions on the bismuth sites in already bismuth-deficient Bi1-xCuSeO systems were investigated via density functional theory. The bismuth-deficient system was used as the reference system for further introduction of substitutional defects. The substitution with phosphorous showed a decrease of up to 40 meV (11%) in the energy gap between conduction and valence bands at the highest substitution concentration. Doping with niobium led to the system changing from a p-type to an n-type conductor, which provides a possible route to obtain n-type BiCuSeO systems. | ru |
dc.language.iso | en | ru |
dc.publisher | iScience | ru |
dc.relation.ispartofseries | Том 24, Выпуск 1022 Номер статьи 103145; | |
dc.title | Improved thermoelectric performance of Bideficient BiCuSeO material doped with Nb, Y, and P | ru |
dc.type | Article | ru |