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dc.contributor.authorYusupov, Khabib
dc.contributor.authorInerbaev, Talgat
dc.contributor.authorRasander, Mikael
dc.contributor.authorPankratova, Daria
dc.contributor.authorConcina, Isabella
dc.contributor.authorLarsson, Andreas J.
dc.contributor.authorVomiero, Alberto
dc.date.accessioned2024-10-18T09:48:58Z
dc.date.available2024-10-18T09:48:58Z
dc.date.issued2021-10
dc.identifier.issn25890042
dc.identifier.otherDOI 10.1016/j.isci.2021.103145
dc.identifier.urihttp://rep.enu.kz/handle/enu/17977
dc.description.abstractThermoelectric materials convert waste heat into electric energy. Oxyselenidebased material, specifically, p-type BiCuSeO, is one of the most promising materials for these applications. There are numerous approaches to improve the heatto-electricity conversion performance. Usually, these approaches are applied individually, starting from the pure intrinsic material. Higher performance could, however, be reached by combining a few strategies simultaneously. In the current work, yttrium, niobium, and phosphorous substitutions on the bismuth sites in already bismuth-deficient Bi1-xCuSeO systems were investigated via density functional theory. The bismuth-deficient system was used as the reference system for further introduction of substitutional defects. The substitution with phosphorous showed a decrease of up to 40 meV (11%) in the energy gap between conduction and valence bands at the highest substitution concentration. Doping with niobium led to the system changing from a p-type to an n-type conductor, which provides a possible route to obtain n-type BiCuSeO systems.ru
dc.language.isoenru
dc.publisheriScienceru
dc.relation.ispartofseriesТом 24, Выпуск 1022 Номер статьи 103145;
dc.titleImproved thermoelectric performance of Bideficient BiCuSeO material doped with Nb, Y, and Pru
dc.typeArticleru


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