Abstract:
The synthesis of β-Ga2O3 ceramic was achieved using high-energy electron beams for the
first time. The irradiation of gallium oxide powder in a copper crucible using a 1.4 MeV electron
beam resulted in a monolithic ceramic structure, eliminating powder particles and imperfections.
The synthesized β-Ga2O3 ceramic exhibited a close-to-ideal composition of O/Ga in a 3:2 ratio. X-ray
diffraction analysis confirmed a monoclinic structure (space group C2/m) that matched the reference
diagram before and after annealing. Photoluminescence spectra revealed multiple luminescence
peaks at blue (~2.7 eV) and UV (3.3, 3.4, 3.8 eV) wavelengths for the synthesized ceramic and
commercial crystals. Raman spectroscopy confirmed the bonding modes in the synthesized ceramic.
The electron beam-assisted method offers a rapid and cost-effective approach for β-Ga2O3 ceramic
production without requiring additional equipment or complex manipulations. This method holds
promise for fabricating refractory ceramics with high melting points, both doped and undoped.
