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Cu2ZnGeSe4 single crystals: Growth, structure and temperature dependence of band gap

dc.contributor.authorBodnar, Ivan V.
dc.contributor.authorKhoroshko, Vitaly V.
dc.contributor.authorYashchuk, Veronika A.
dc.contributor.authorGremenok, Valery F.
dc.contributor.authorKazi, Mohsin
dc.contributor.authorKhandaker, Mayeen U.
dc.contributor.authorZubar, Tatiana I.
dc.contributor.authorTishkevich, Daria I.
dc.contributor.authorTrukhanov, Alex V.
dc.contributor.authorTrukhanov, Sergei V.
dc.date.accessioned2025-01-09T10:57:43Z
dc.date.available2025-01-09T10:57:43Z
dc.date.issued2024
dc.identifier.issn0022-0248
dc.identifier.otherdoi.org/10.1016/j.jcrysgro.2023.127481
dc.identifier.urihttp://rep.enu.kz/handle/enu/20787
dc.description.abstractThis work describes the production of single crystals of the semiconducting quaternary compound Cu2ZnGeSe4 using a gas chemical method in which iodine was used as a transporter. For all the synthesized samples, their phase state, crystal structure syngony and lattice constants were refined. The unit cell of the studied compound is characterized by tetragonal symmetry. The transmission spectrum was applied to calculate the band gap, which is depicted as temperature function in 20–300 K range. It was fixed that the band gap increases by 12% with decreasing temperature.ru
dc.language.isoenru
dc.publisherJournal of Crystal Growthru
dc.relation.ispartofseries626 (2024) 127481;
dc.subjectSingle crystal growthru
dc.subjectCrystal structureru
dc.subjectBand gapru
dc.subjectGas chemical methodru
dc.subjectSemiconducting quaternary alloysru
dc.titleCu2ZnGeSe4 single crystals: Growth, structure and temperature dependence of band gapru
dc.typeArticleru


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