Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure

dc.contributor.author	Usseinov, Abay
dc.contributor.author	Koishybayeva, Zhanymgul
dc.contributor.author	Platonenko, Alexander
dc.contributor.author	Pankratov, Vladimir
dc.contributor.author	Suchikova, Yana
dc.contributor.author	Akilbekov, Abdirash
dc.contributor.author	Zdorovets, Maxim
dc.contributor.author	Purans, Juris
dc.contributor.author	Popov, Anatoli I.
dc.date.accessioned	2025-01-27T12:49:34Z
dc.date.available	2025-01-27T12:49:34Z
dc.date.issued	2021
dc.identifier.issn	1996-1944
dc.identifier.other	doi.org/10.3390/ ma14237384
dc.identifier.uri	http://rep.enu.kz/handle/enu/21225
dc.language.iso	en	ru
dc.publisher	Materials	ru
dc.subject	DFT	ru
dc.subject	β-Ga2O3	ru
dc.subject	oxygen vacancy	ru
dc.subject	deep donor	ru
dc.subject	p-type conductivity	ru
dc.subject	point defects	ru
dc.title	Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure	ru
dc.type	Article	ru