REPOSITORY.ENU

The Synthesis and Characterization of CdS Nanostructures Using a SiO2/Si Ion-Track Template

Show simple item record

dc.contributor.author Akylbekova, Aiman
dc.contributor.author Mantiyeva, Kyzdarkhan
dc.contributor.author Dauletbekova, Alma
dc.contributor.author Akilbekov, Abdirash
dc.contributor.author Baimukhanov, Zein
dc.contributor.author Vlasukova, Liudmila
dc.contributor.author Aralbayeva, Gulnara
dc.contributor.author Abdrakhmetova, Ainash
dc.contributor.author Bazarbek, Assyl-Dastan
dc.contributor.author Abdihalikova, Fariza
dc.date.accessioned 2026-03-04T11:17:57Z
dc.date.available 2026-03-04T11:17:57Z
dc.date.issued 2024
dc.identifier.citation Akylbekova, A.; Mantiyeva, K.; Dauletbekova, A.; Akilbekov, A.; Baimukhanov, Z.; Vlasukova, L.; Aralbayeva, G.; Abdrakhmetova, A.; Bazarbek, A.-D.; Abdihalikova, F. The Synthesis and Characterization of CdS Nanostructures Using a SiO2/Si Ion-Track Template. Crystals 2024, 14, 1091. https://doi.org/10.3390/ cryst14121091 ru
dc.identifier.issn 2073-4352
dc.identifier.other doi.org/10.3390/ cryst14121091
dc.identifier.uri http://repository.enu.kz/handle/enu/29753
dc.description.abstract In the present work, we present the process of preparing CdS nanostructures based on templating synthesis using chemical deposition (CD) on a SiO2/Si substrate. A 0.7 µm thick silicon dioxide film was thermally prepared on the surface of an n-type conduction Si wafer, followed by the creation of latent ion tracks on the film by irradiating them with swift heavy Xe ions with an energy of 231 MeV and a fluence of 108 cm−2 . As a result of etching in hydrofluoric acid solution (4%), pores in the form of truncated cones with different diameters were formed. The filling of the nanopores with cadmium sulfide was carried out via templated synthesis using CD methods on a SiO2 nanopores/Si substrate for 20–40 min. After CdS synthesis, the surfaces of nanoporous SiO2 nanopores/Si were examined using a scanning electron microscope to determine the pore sizes and the degree of pore filling. The crystal structure of the filled silica nanopores was investigated using X-ray diffraction, which showed CdS nanocrystals with an orthorhombic structure with symmetry group 59 Pmmn observed at 2θ angles of 61. 48◦ and 69.25◦ . Photoluminescence spectra were recorded at room temperature in the spectral range of 300–800 nm at an excitation wavelength of 240 nm, where emission bands centered around 2.53 eV, 2.45 eV, and 2.37 eV were detected. The study of the CVCs showed that, with increasing forward bias voltage, there was a significant increase in the forward current in the samples with a high degree of occupancy of CdS nanoparticles, which showed the oneway electronic conductivity of CdS/SiO2/Si nanostructures. For the first time, CdS nanostructures with orthorhombic crystal structure were obtained using track templating synthesis, and the density of electronic states was modeled using quantum–chemical calculations. Comparative analysis of experimental and calculated data of nanostructure parameters showed good agreement and are confirmed by the results of other authors. ru
dc.language.iso en ru
dc.publisher Crystals ru
dc.relation.ispartofseries 14, 1091;
dc.subject CdS nanostructures ru
dc.subject chemical deposition ru
dc.subject SiO2/Si substrate ru
dc.subject SHI ru
dc.subject nanoporous SiO2 ru
dc.subject CdS/SiO2/Si structures ru
dc.subject X-ray diffraction ru
dc.subject Raman spectroscopy ru
dc.subject photoluminescence ru
dc.subject exciton scattering ru
dc.title The Synthesis and Characterization of CdS Nanostructures Using a SiO2/Si Ion-Track Template ru
dc.type Article ru


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Browse

My Account