Аннотации:
This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ce
ramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics
exhibit a nanocrystalline structure with an average crystallite size of ~30 nm, high crystallinity, and minimal
lattice strain (<0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced
emissions. While intrinsic Ga₂O₃ emission exhibits thermal quenching above 100 K, Eu³⁺-related emissions,
notably the 611 nm red emission, show thermal stability, retaining ~90 % of their intensity at 300 K. Addi
tionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced
defects, was detected, meriting further exploration. These findings indicate that Ga₂O₃:Eu ceramics synthesized
via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their
rapid production and enhanced thermal stability.
