Аннотации:
The paper presents the results of the influence of heavy ion irradiation on the formation of anisotropic distortions
of the crystal structure and electron density distribution in SiC ceramics. The assessment of the change in the
properties of the damaged layer was carried out using Raman spectroscopy methods, and using data on structural
changes obtained using the X-ray diffraction method. The observed alterations in the spectral modes E1(TO),
E2(TO) and A1(LO) depending on the irradiation temperature indicate an anisotropic distortion of the structure,
which has a clearly expressed dependence on the irradiation temperature, as well as the type of ions used for
irradiation. The assessment results of changes in the electron density distribution contingent upon the irradiation
temperature for both types of ion irradiation showed a direct correlation between the irradiation temperature
growth and the electron density anisotropic distortion caused by the deformation of chemical bonds. In turn, the
combination of the effects of thermal heating and ionization processes causes deformation distortion of chemical
bonds, which is most pronounced at high irradiation temperatures, for which thermal expansion of the crystal
lattice and accelerated diffusion of vacancy defects play a key role in disordering.
