Аннотации:
We report the results of synthesis of zinc selenide (ZnSe) nanocrystals into SiO2/Si track
templates formed by irradiation with 200 MeV Xe ions up to a fluence of 107
ions/cm2
. Zinc selenide
nanocrystals were obtained by chemical deposition from the alkaline aqueous solution. Scanning
electron microscopy, X-ray diffractometry, Raman and photoluminescence spectroscopy, and electrical
measurements were used for characterization of synthesized ZnSe/SiO2nanoporous/Si nanocomposites.
XRD data for as-deposited precipitates revealed the formation of ZnSe nanocrystals with cubic crystal
structure, spatial syngony F-43m (216). According to non-empirical calculations using GGA-PBE
and HSE06 functionals, ZnSe crystal is a direct-zone crystal with a minimum bandgap width of
2.36 eV and anisotropic electronic distribution. It was found that a thermal treatment of synthesized
nanocomposites at 800 ◦C results in an increase in ZnSe nanocrystallites size as well as an increase
in emission intensity of created precipitates in a broad UV-VIS spectra range. However, vacuum
conditions of annealing still do not completely prevent the oxidation of zinc selenide, and a formation
of hexagonal ZnO phase is registered in the annealed samples. The current–voltage characteristics of
the synthesized nanocomposites proved to have n-type conductivity, as well as increased conductivity
after annealing.
