Аннотации:
This study presents theoretical and experimental investigations into the electron and hole
color centers in BaFBr crystals, characterizing their electronic and optical properties. Stoichiometric
BaFBr crystals grown by the Steber method were used in the experiments. Radiation defects in BaFBr
crystals were created by irradiation with 147 MeV 84Kr ions with up to fluences of 1010–1014 ions/cm2
.
The formation of electron color centers (F(F−), F2
(F−), F2
(Br−)) and hole aggregates was experimentally established by optical absorption spectroscopy. Performed measurements are compared with
theoretical calculations. It allows us to determine the electron transition mechanisms and investigate
the processes involved in photoluminescence emission in Eu-doped BaFBr materials to enhance the
understanding of the fundamental electronic structure and properties of electron and hole color
centers formed in BaFBr crystals.
