Аннотации:
We present a study on the dynamics of the electrochemical dissolution of
n-InP(111), explicitly analysing the behaviour of the ‘electrolyte–
semiconductor’ system in different electrolyte compositions, based on the
analysis of critical points of the electrochemical reaction. Critical points
are defined as characteristics of the technological process, where active
phase dissolution of the sample surface is observed. We determine the
minimum and maximum current-density values required to initiate the
pore formation process on the surface of n-InP(111) in different electrolyte compositions. Additionally, for all cases, the duration of the active
phase of surface dissolution and the Flade’s potential values are determined. This allows us to establish optimal parameters for treatment time,
current density, and anodizing voltage for etching n-InP(111) in aqueous
and alcoholic solutions of hydrochloric, hydrofluoric, and nitric acids.
This, in turn, enables understanding and investigation of the kinetics of
electrochemical surface dissolution as an essential result for unifying the
requirements of the technological process of nanostructuring the surface
of indium phosphide. The tools presented for analysing the dynamics of
the electrochemical dissolution of n-InP can be applied to assess the behaviour of various semiconductors during electrochemical etching.
