Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make
orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2
-NWs/SiO2/Si
nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to
defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage
characteristic measurement showed that the SnO2
-NWs/SiO2/Si nanoheterostructure made this way
has many p-n junctions.