dc.contributor.author |
Baimukhanov, Zein |
|
dc.contributor.author |
Dauletbekova, Alma |
|
dc.contributor.author |
Junisbekova, Diana |
|
dc.contributor.author |
Kalytka, Valeriy |
|
dc.contributor.author |
Akilbekov, Abdirash |
|
dc.contributor.author |
Akylbekova, Aiman |
|
dc.contributor.author |
Baubekova, Guldar |
|
dc.contributor.author |
Aralbayeva, Gulnara |
|
dc.contributor.author |
Bazarbek, Assyl-Dastan |
|
dc.contributor.author |
Usseinov, Abay |
|
dc.contributor.author |
Popov, Anatoli I. |
|
dc.date.accessioned |
2025-01-27T09:48:42Z |
|
dc.date.available |
2025-01-27T09:48:42Z |
|
dc.date.issued |
2024 |
|
dc.identifier.issn |
1996-1944 |
|
dc.identifier.other |
doi.org/10.3390/ma17061226 |
|
dc.identifier.uri |
http://rep.enu.kz/handle/enu/21193 |
|
dc.description.abstract |
Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make
orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2
-NWs/SiO2/Si
nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to
defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage
characteristic measurement showed that the SnO2
-NWs/SiO2/Si nanoheterostructure made this way
has many p-n junctions. |
ru |
dc.language.iso |
en |
ru |
dc.publisher |
Materials |
ru |
dc.relation.ispartofseries |
17, 1226; |
|
dc.subject |
track technologies |
ru |
dc.subject |
SiO2/Si track template |
ru |
dc.subject |
electrochemical deposition |
ru |
dc.subject |
oxide semiconductors |
ru |
dc.subject |
nanowires |
ru |
dc.subject |
hybrid DFT calculations |
ru |
dc.title |
Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates |
ru |
dc.type |
Article |
ru |