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dc.contributor.authorBaimukhanov, Zein
dc.contributor.authorDauletbekova, Alma
dc.contributor.authorJunisbekova, Diana
dc.contributor.authorKalytka, Valeriy
dc.contributor.authorAkilbekov, Abdirash
dc.contributor.authorAkylbekova, Aiman
dc.contributor.authorBaubekova, Guldar
dc.contributor.authorAralbayeva, Gulnara
dc.contributor.authorBazarbek, Assyl-Dastan
dc.contributor.authorUsseinov, Abay
dc.contributor.authorPopov, Anatoli I.
dc.date.accessioned2025-01-27T09:48:42Z
dc.date.available2025-01-27T09:48:42Z
dc.date.issued2024
dc.identifier.issn1996-1944
dc.identifier.otherdoi.org/10.3390/ma17061226
dc.identifier.urihttp://rep.enu.kz/handle/enu/21193
dc.description.abstractElectrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2 -NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO2 -NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions.ru
dc.language.isoenru
dc.publisherMaterialsru
dc.relation.ispartofseries17, 1226;
dc.subjecttrack technologiesru
dc.subjectSiO2/Si track templateru
dc.subjectelectrochemical depositionru
dc.subjectoxide semiconductorsru
dc.subjectnanowiresru
dc.subjecthybrid DFT calculationsru
dc.titleSynthesis of Orthorhombic Tin Dioxide Nanowires in Track Templatesru
dc.typeArticleru


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