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Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates

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dc.contributor.author Baimukhanov, Zein
dc.contributor.author Dauletbekova, Alma
dc.contributor.author Junisbekova, Diana
dc.contributor.author Kalytka, Valeriy
dc.contributor.author Akilbekov, Abdirash
dc.contributor.author Akylbekova, Aiman
dc.contributor.author Baubekova, Guldar
dc.contributor.author Aralbayeva, Gulnara
dc.contributor.author Bazarbek, Assyl-Dastan
dc.contributor.author Usseinov, Abay
dc.contributor.author Popov, Anatoli I.
dc.date.accessioned 2025-01-27T09:48:42Z
dc.date.available 2025-01-27T09:48:42Z
dc.date.issued 2024
dc.identifier.issn 1996-1944
dc.identifier.other doi.org/10.3390/ma17061226
dc.identifier.uri http://rep.enu.kz/handle/enu/21193
dc.description.abstract Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2 -NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO2 -NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions. ru
dc.language.iso en ru
dc.publisher Materials ru
dc.relation.ispartofseries 17, 1226;
dc.subject track technologies ru
dc.subject SiO2/Si track template ru
dc.subject electrochemical deposition ru
dc.subject oxide semiconductors ru
dc.subject nanowires ru
dc.subject hybrid DFT calculations ru
dc.title Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates ru
dc.type Article ru


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